DMN2036UCB4-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X2-WLB1616
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
Description: MOSFET 2N-CH X2-WLB1616
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
6000+ | 0.33 EUR |
9000+ | 0.31 EUR |
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Technische Details DMN2036UCB4-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W, Mounting: SMD, Case: X2-WLB1616-4, Kind of package: reel; tape, Pulsed drain current: 30A, Drain-source voltage: 24V, Drain current: 4A, On-state resistance: 52mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.45W, Polarisation: unipolar, Gate charge: 12.6nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMN2036UCB4-7 nach Preis ab 0.27 EUR bis 1.02 EUR
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DMN2036UCB4-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 2848 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2036UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X2-WLB1616 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V Supplier Device Package: X2-WLB1616-4 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2036UCB4-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 24V 1.6A 4-Pin X2-WLB T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2036UCB4-7 | Hersteller : Diodes Inc | Trans MOSFET N-CH 24V 1.6A 4-Pin X2-WLB T/R |
Produkt ist nicht verfügbar |
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DMN2036UCB4-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 24V 1.6A 4-Pin X2-WLB T/R |
Produkt ist nicht verfügbar |
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DMN2036UCB4-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 24V 1.6A 4-Pin X2-WLB T/R |
Produkt ist nicht verfügbar |
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DMN2036UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W Mounting: SMD Case: X2-WLB1616-4 Kind of package: reel; tape Pulsed drain current: 30A Drain-source voltage: 24V Drain current: 4A On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar Gate charge: 12.6nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN2036UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W Mounting: SMD Case: X2-WLB1616-4 Kind of package: reel; tape Pulsed drain current: 30A Drain-source voltage: 24V Drain current: 4A On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar Gate charge: 12.6nC Kind of channel: enhanced Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |