DMN2040LTS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 6.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.25 EUR |
| 5000+ | 0.24 EUR |
| 12500+ | 0.22 EUR |
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Technische Details DMN2040LTS-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 890mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V, Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-TSSOP, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN2040LTS-13 nach Preis ab 0.21 EUR bis 1.11 EUR
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DMN2040LTS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 30A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2245 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2040LTS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 30A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2245 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2040LTS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 890mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-TSSOP Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 37432 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2040LTS-13 | Hersteller : Diodes Incorporated |
MOSFET ENHANCE MODE MOSFET DUAL N-CHAN |
auf Bestellung 6684 Stücke: Lieferzeit 14-28 Tag (e) |
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