DMN2040LTS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2500+ | 0.24 EUR |
| 5000+ | 0.23 EUR |
| 12500+ | 0.22 EUR |
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Technische Details DMN2040LTS-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 890mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V, Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-TSSOP, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN2040LTS-13 nach Preis ab 0.2 EUR bis 1.14 EUR
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DMN2040LTS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8 Gate charge: 5.2nC On-state resistance: 36mΩ Power dissipation: 0.89W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TSSOP8 Polarisation: unipolar Pulsed drain current: 30A Drain-source voltage: 20V Drain current: 4.9A |
auf Bestellung 2012 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2040LTS-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET DUAL N-CHAN |
auf Bestellung 5734 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2040LTS-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 890mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-TSSOP Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14774 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2040LTS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Gate charge: 5.2nC
On-state resistance: 36mΩ
Power dissipation: 0.89W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TSSOP8
Polarisation: unipolar
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 4.9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Gate charge: 5.2nC
On-state resistance: 36mΩ
Power dissipation: 0.89W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TSSOP8
Polarisation: unipolar
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 4.9A
auf Bestellung 2012 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 134+ | 0.53 EUR |
| 232+ | 0.31 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| DMN2040LTS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET DUAL N-CHAN
MOSFETs ENHANCE MODE MOSFET DUAL N-CHAN
auf Bestellung 5734 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.12 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |
| 2500+ | 0.21 EUR |
| DMN2040LTS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14774 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |