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Technische Details DMN2041LSD-13 Diodes Zetex
Description: MOSFET 2N-CH 20V 7.63A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.16W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7.63A, Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN2041LSD-13 nach Preis ab 0.21 EUR bis 1.29 EUR
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DMN2041LSD-13 | Diodes Zetex |
 Trans MOSFET N-CH 20V 7.63A 8-Pin SO T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2041LSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 7.63A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.16W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.63A Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 165000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2041LSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 7.63A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.16W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.63A Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 166243 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2041LSD-13 | Diodes Incorporated |
MOSFETs MOSFET DUAL N-CHAN ENHANCE MODE |
auf Bestellung 1767 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2041LSD-13 |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 7.63A 8-Pin SO T/R
Trans MOSFET N-CH 20V 7.63A 8-Pin SO T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.22 EUR |
| 5000+ | 0.21 EUR |
| DMN2041LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.63A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.63A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 20V 7.63A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.63A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.28 EUR |
| 5000+ | 0.25 EUR |
| 7500+ | 0.24 EUR |
| 12500+ | 0.23 EUR |
| 17500+ | 0.22 EUR |
| DMN2041LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.63A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.63A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 20V 7.63A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.16W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.63A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 166243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.18 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| DMN2041LSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET DUAL N-CHAN ENHANCE MODE
MOSFETs MOSFET DUAL N-CHAN ENHANCE MODE
auf Bestellung 1767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.46 EUR |