auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.18 EUR |
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Technische Details DMN2050LFDB-13 Diodes Zetex
Description: MOSFET 2N-CH 20V 3.3A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 730mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DMN2050LFDB-13 nach Preis ab 0.15 EUR bis 0.67 EUR
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DMN2050LFDB-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 3.3A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2050LFDB-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 4.5A 6-Pin UDFN EP T/R |
auf Bestellung 9602 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2050LFDB-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 3.3A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 54109 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2050LFDB-13 | Hersteller : Diodes Incorporated |
MOSFET DUAL N-CH EH MODE 20V 45mOhm 4.5A |
auf Bestellung 48246 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2050LFDB-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 4.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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DMN2050LFDB-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 4.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMN2050LFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 25A Mounting: SMD Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN2050LFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 25A Mounting: SMD Case: U-DFN2020-6 |
Produkt ist nicht verfügbar |