DMN2050LFDB-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.3A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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Technische Details DMN2050LFDB-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.3A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 730mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DMN2050LFDB-13 nach Preis ab 0.21 EUR bis 1.02 EUR
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DMN2050LFDB-13 | Diodes Incorporated |
MOSFETs DUAL N-CH EH MODE 20V 45mOhm 4.5A |
auf Bestellung 45640 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2050LFDB-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 3.3A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 12455 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2050LFDB-13 |
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Hersteller: Diodes Incorporated
MOSFETs DUAL N-CH EH MODE 20V 45mOhm 4.5A
MOSFETs DUAL N-CH EH MODE 20V 45mOhm 4.5A
auf Bestellung 45640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.01 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.24 EUR |
| 5000+ | 0.21 EUR |
| DMN2050LFDB-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET 2N-CH 20V 3.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 12455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 28+ | 0.63 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| 2000+ | 0.25 EUR |
| 5000+ | 0.22 EUR |