DMN2053UQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.56 EUR |
45+ | 0.39 EUR |
100+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
5000+ | 0.097 EUR |
10000+ | 0.084 EUR |
50000+ | 0.068 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2053UQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN2053UQ-7 nach Preis ab 0.062 EUR bis 0.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMN2053UQ-7 | Hersteller : Diodes Zetex | DMN2053UQ-7 |
auf Bestellung 93000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
DMN2053UQ-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DMN2053UQ-7 | Hersteller : Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 3K |
Produkt ist nicht verfügbar |