DMN2053UWQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
9000+ | 0.1 EUR |
75000+ | 0.084 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2053UWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN2053UWQ-7 nach Preis ab 0.077 EUR bis 0.077 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
---|---|---|---|---|---|---|---|---|---|
DMN2053UWQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN2053UWQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.9 A, 0.039 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 470mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.039ohm |
auf Bestellung 1810 Stücke: Lieferzeit 14-21 Tag (e) |
||||||
DMN2053UWQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN2053UWQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 2.9 A, 0.039 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 470mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.039ohm |
auf Bestellung 1810 Stücke: Lieferzeit 14-21 Tag (e) |
||||||
DMN2053UWQ-7 | Hersteller : Diodes Zetex | 20V N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
DMN2053UWQ-7 | Hersteller : Diodes Inc | MOSFET BVDSS: 8V24V SOT323 T&R 3K |
Produkt ist nicht verfügbar |
||||||
DMN2053UWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Pulsed drain current: 20A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||
DMN2053UWQ-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT323 T&R 3K |
Produkt ist nicht verfügbar |
||||||
DMN2053UWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Pulsed drain current: 20A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |