DMN2058U-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 4.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 1.13W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.12 EUR |
| 50000+ | 0.1 EUR |
| 100000+ | 0.099 EUR |
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Technische Details DMN2058U-13 Diodes Incorporated
Description: MOSFET N-CH 20V 4.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, Power Dissipation (Max): 1.13W, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V.
Weitere Produktangebote DMN2058U-13 nach Preis ab 0.092 EUR bis 0.63 EUR
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DMN2058U-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 4.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Power Dissipation (Max): 1.13W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V |
auf Bestellung 168422 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2058U-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 4.6A 3-Pin SOT-23 T/R |
auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2058U-13 | Hersteller : Diodes Inc |
20V N-Channel Enhancement Mode MOSFET |
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| DMN2058U-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 4.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN2058U-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23 Case: SOT23 Drain-source voltage: 20V Drain current: 3.7A On-state resistance: 91mΩ Type of transistor: N-MOSFET Power dissipation: 1.13W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
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DMN2058U-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
Produkt ist nicht verfügbar |
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DMN2058U-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23 Case: SOT23 Drain-source voltage: 20V Drain current: 3.7A On-state resistance: 91mΩ Type of transistor: N-MOSFET Power dissipation: 1.13W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD |
Produkt ist nicht verfügbar |