Produkte > DIODES ZETEX > DMN2058UW-13
DMN2058UW-13

DMN2058UW-13 Diodes Zetex


173dmn2058uw.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 3.5A 3-Pin SOT-323 T/R
auf Bestellung 90000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.069 EUR
Mindestbestellmenge: 10000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN2058UW-13 Diodes Zetex

Description: MOSFET N-CH 20V 3.5A SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote DMN2058UW-13 nach Preis ab 0.074 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN2058UW-13 DMN2058UW-13 Hersteller : Diodes Incorporated Description: MOSFET N-CH 20V 3.5A SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.091 EUR
30000+ 0.089 EUR
50000+ 0.074 EUR
Mindestbestellmenge: 10000
DMN2058UW-13 DMN2058UW-13 Hersteller : Diodes Incorporated Description: MOSFET N-CH 20V 3.5A SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
42+ 0.43 EUR
100+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 29
DMN2058UW-13 DMN2058UW-13 Hersteller : Diodes Inc 173dmn2058uw.pdf Trans MOSFET N-CH 20V 3.5A T/R
Produkt ist nicht verfügbar
DMN2058UW-13 DMN2058UW-13 Hersteller : Diodes Zetex 173dmn2058uw.pdf Trans MOSFET N-CH 20V 3.5A 3-Pin SOT-323 T/R
Produkt ist nicht verfügbar
DMN2058UW-13 DMN2058UW-13 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN2058UW-13 DMN2058UW-13 Hersteller : Diodes Incorporated DIOD_S_A0004567300_1-2542480.pdf MOSFET MOSFET BVDSS: 8V-24V SOT323 T&R 10K
Produkt ist nicht verfügbar
DMN2058UW-13 DMN2058UW-13 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar