DMN2065UWQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.14 EUR |
| 15000+ | 0.13 EUR |
| 21000+ | 0.12 EUR |
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Technische Details DMN2065UWQ-7 Diodes Incorporated
Description: MOSFET N-CH 20V 3.1A SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN2065UWQ-7 nach Preis ab 0.12 EUR bis 0.72 EUR
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DMN2065UWQ-7 | Diodes Incorporated |
MOSFET MOSFETBVDSS: 8V-24V |
auf Bestellung 10458 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2065UWQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.1A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 24030 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2065UWQ-7 |
|
Hersteller: Diodes Incorporated
MOSFET MOSFETBVDSS: 8V-24V
MOSFET MOSFETBVDSS: 8V-24V
auf Bestellung 10458 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.7 EUR |
| 10+ | 0.5 EUR |
| 100+ | 0.22 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.15 EUR |
| 9000+ | 0.13 EUR |
| 24000+ | 0.12 EUR |
| DMN2065UWQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 3.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 24030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 40+ | 0.44 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |