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DMN2080UCB4-7

DMN2080UCB4-7 Diodes Incorporated

DIOD_S_A0004145116_1-2542546.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
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4+0.84 EUR
10+0.59 EUR
100+0.3 EUR
500+0.28 EUR
1000+0.24 EUR
3000+0.17 EUR
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Technische Details DMN2080UCB4-7 Diodes Incorporated

Description: MOSFET N-CH 20V 3A X2-WLB0606-4, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V, Power Dissipation (Max): 710mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-WLB0606-4, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V.

Weitere Produktangebote DMN2080UCB4-7 nach Preis ab 0.56 EUR bis 0.92 EUR

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DMN2080UCB4-7 DMN2080UCB4-7 Hersteller : Diodes Incorporated DMN2080UCB4.pdf Description: MOSFET N-CH 20V 3A X2-WLB0606-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
Power Dissipation (Max): 710mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-WLB0606-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
32+0.56 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DMN2080UCB4-7 DMN2080UCB4-7 Hersteller : Diodes Inc 21dmn2080ucb4.pdf Trans MOSFET N-CH 20V 4A 4-Pin X2-WLP T/R
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DMN2080UCB4-7 DMN2080UCB4-7 Hersteller : Diodes Incorporated DMN2080UCB4.pdf Description: MOSFET N-CH 20V 3A X2-WLB0606-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
Power Dissipation (Max): 710mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-WLB0606-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
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DMN2080UCB4-7 Hersteller : DIODES INCORPORATED DMN2080UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Mounting: SMD
Case: X2-WLB0808-4
Gate charge: 7.4nC
On-state resistance: 0.115Ω
Power dissipation: 1.25W
Drain current: 3.2A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 8A
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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