DMN2100UDM-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 3.3A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2100UDM-7 Diodes Incorporated
Description: MOSFET N-CH 20V 3.3A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V.
Weitere Produktangebote DMN2100UDM-7 nach Preis ab 0.29 EUR bis 1.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN2100UDM-7 | Hersteller : Diodes Incorporated |
MOSFET 900mW 20Vdss |
auf Bestellung 2989 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||
|
|
DMN2100UDM-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 3.3A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V |
auf Bestellung 10790 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||
| DMN2100UDM-7 | Hersteller : DIODES/ZETEX |
N-MOSFET 20V 3.3A 55mΩ 1W DMN2100UDM-7 Diodes TDMN2100udm Anzahl je Verpackung: 100 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
 |
DMN2100UDM-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 4A 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
DMN2100UDM-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26 Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT26 Drain current: 2.5A Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 0.6W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
DMN2100UDM-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26 Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT26 Drain current: 2.5A Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 0.6W |
Produkt ist nicht verfügbar |