Technische Details DMN2114SN-7 Diodes Incorporated
Description: MOSFET N-CH 20V 1.2A SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 1mA, Supplier Device Package: SC-59-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V.
Weitere Produktangebote DMN2114SN-7
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DMN2114SN-7 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 20V 1.2A 3-Pin SC-59 T/R |
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DMN2114SN-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 20V 1.2A SC59-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 1mA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
Produkt ist nicht verfügbar |