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DMN21D1UDA-7B

DMN21D1UDA-7B Diodes Incorporated


DIOD_S_A0003551615_1-2542194.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFETBVDSS: 8V-24V
auf Bestellung 3903 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.69 EUR
10+0.56 EUR
100+0.38 EUR
1000+0.21 EUR
2500+0.20 EUR
10000+0.17 EUR
Mindestbestellmenge: 5
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Technische Details DMN21D1UDA-7B Diodes Incorporated

Description: MOSFET 2N-CH 20V 0.455A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 310mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-6.

Weitere Produktangebote DMN21D1UDA-7B nach Preis ab 0.15 EUR bis 0.17 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN21D1UDA-7B Hersteller : Diodes Incorporated DMN21D1UDA.pdf Description: MOSFET 2N-CH 20V 0.455A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 290000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.17 EUR
20000+0.16 EUR
30000+0.15 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH