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DMN21D1UDA-7B

DMN21D1UDA-7B Diodes Incorporated

DMN21D1UDA.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.455A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.17 EUR
20000+0.16 EUR
30000+0.15 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN21D1UDA-7B Diodes Incorporated

Description: MOSFET 2N-CH 20V 0.455A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 310mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-6.

Weitere Produktangebote DMN21D1UDA-7B nach Preis ab 0.17 EUR bis 0.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMN21D1UDA-7B DMN21D1UDA-7B Diodes Incorporated DMN21D1UDA.pdf MOSFETs MOSFETBVDSS: 8V-24V
auf Bestellung 10834 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.83 EUR
10+0.51 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.2 EUR
5000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN21D1UDA-7B DMN21D1UDA-7B Diodes Incorporated DMN21D1UDA.pdf Description: MOSFET 2N-CH 20V 0.455A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 44570 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
5000+0.19 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN21D1UDA-7B DMN21D1UDA.pdf
DMN21D1UDA-7B
Hersteller: Diodes Incorporated
MOSFETs MOSFETBVDSS: 8V-24V
auf Bestellung 10834 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.83 EUR
10+0.51 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.2 EUR
5000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN21D1UDA-7B DMN21D1UDA.pdf
DMN21D1UDA-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.455A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
auf Bestellung 44570 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.88 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
5000+0.19 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH