
auf Bestellung 3903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 0.69 EUR |
10+ | 0.56 EUR |
100+ | 0.38 EUR |
1000+ | 0.21 EUR |
2500+ | 0.20 EUR |
10000+ | 0.17 EUR |
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Technische Details DMN21D1UDA-7B Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.455A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 310mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-6.
Weitere Produktangebote DMN21D1UDA-7B nach Preis ab 0.15 EUR bis 0.17 EUR
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DMN21D1UDA-7B | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 |
auf Bestellung 290000 Stücke: Lieferzeit 10-14 Tag (e) |
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