Produkte > DIODES INCORPORATED > DMN21D2UFB-7
DMN21D2UFB-7

DMN21D2UFB-7 Diodes Incorporated

DMN21D2UFB.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.4 EUR
100+0.25 EUR
500+0.19 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN21D2UFB-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X1-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 760mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 380mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V.

Weitere Produktangebote DMN21D2UFB-7 nach Preis ab 0.13 EUR bis 0.68 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN21D2UFB-7 DMN21D2UFB-7 Hersteller : Diodes Incorporated DMN21D2UFB.pdf MOSFETs MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.68 EUR
10+0.43 EUR
100+0.27 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMN21D2UFB-7 DMN21D2UFB-7 Hersteller : Diodes Incorporated DMN21D2UFB.pdf Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN21D2UFB-7 Hersteller : DIODES INCORPORATED DMN21D2UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Polarisation: unipolar
Gate charge: 930pC
On-state resistance: 3Ω
Power dissipation: 570mW
Drain current: 0.7A
Pulsed drain current: 1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH