DMN21D2UFB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V
auf Bestellung 330000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
| 9000+ | 0.17 EUR |
| 75000+ | 0.15 EUR |
| 150000+ | 0.14 EUR |
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Technische Details DMN21D2UFB-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 760mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 380mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V.
Weitere Produktangebote DMN21D2UFB-7 nach Preis ab 0.16 EUR bis 0.92 EUR
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DMN21D2UFB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V |
auf Bestellung 330000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN21D2UFB-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V X1-DFN1006-3 T&R 3K |
auf Bestellung 2990 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMN21D2UFB-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 0.76A T/R |
Produkt ist nicht verfügbar |
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| DMN21D2UFB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: X1-DFN1006-3 Drain current: 0.7A Gate charge: 930pC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 1A Mounting: SMD On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 570mW Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMN21D2UFB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: X1-DFN1006-3 Drain current: 0.7A Gate charge: 930pC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 1A Mounting: SMD On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 570mW |
Produkt ist nicht verfügbar |