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Technische Details DMN2230U-7 Diodes Incorporated
Description: MOSFET N-CH 20V 2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V.
Weitere Produktangebote DMN2230U-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
DMN2230U-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23 Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Power dissipation: 0.6W Polarisation: unipolar Drain current: 2A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V On-state resistance: 0.23Ω |
auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN2230U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)



