DMN2230U-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 350+ | 0.21 EUR |
| 435+ | 0.17 EUR |
| 490+ | 0.15 EUR |
| 525+ | 0.14 EUR |
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Technische Details DMN2230U-7 DIODES INCORPORATED
Description: MOSFET N-CH 20V 2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V.
Weitere Produktangebote DMN2230U-7 nach Preis ab 0.33 EUR bis 0.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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DMN2230U-7 | Hersteller : DIODES/ZETEX |
N-MOSFET 20V 2A 110mΩ 600mW DMN2230U-7 Diodes TDMN2230u Anzahl je Verpackung: 100 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2230U-7 | Hersteller : Diodes Incorporated |
MOSFET 600mW 20Vdss |
auf Bestellung 5368 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2230U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V |
Produkt ist nicht verfügbar |
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DMN2230U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V |
Produkt ist nicht verfügbar |