DMN2230U-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
auf Bestellung 2549 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| 380+ | 0.19 EUR |
| 430+ | 0.17 EUR |
| 485+ | 0.15 EUR |
| 510+ | 0.14 EUR |
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Technische Details DMN2230U-7 DIODES INCORPORATED
Description: MOSFET N-CH 20V 2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V.
Weitere Produktangebote DMN2230U-7 nach Preis ab 0.14 EUR bis 0.36 EUR
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DMN2230U-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23 Power dissipation: 0.6W Polarisation: unipolar Drain current: 2A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 On-state resistance: 0.23Ω Mounting: SMD Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2549 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2230U-7 | Hersteller : Diodes Incorporated |
MOSFET 600mW 20Vdss |
auf Bestellung 5368 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2230U-7 | Hersteller : DIODES/ZETEX |
N-MOSFET 20V 2A 110mΩ 600mW DMN2230U-7 Diodes TDMN2230u Anzahl je Verpackung: 100 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2230U-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN2230U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V |
Produkt ist nicht verfügbar |
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DMN2230U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V |
Produkt ist nicht verfügbar |