DMN2250UFB-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 1.35A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V
auf Bestellung 320000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.1 EUR |
| 50000+ | 0.083 EUR |
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Technische Details DMN2250UFB-7B Diodes Incorporated
Description: MOSFET N-CH 20V 1.35A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V.
Weitere Produktangebote DMN2250UFB-7B nach Preis ab 0.12 EUR bis 1.04 EUR
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DMN2250UFB-7B | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 1.35A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V |
auf Bestellung 329380 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2250UFB-7B | Hersteller : Diodes Incorporated |
MOSFET N-CH MOSFET 20V |
auf Bestellung 87687 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMN2250UFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 1.03A Drain-source voltage: 20V Gate charge: 3.1nC Case: X1-DFN1006-3 Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.25Ω Pulsed drain current: 6A Type of transistor: N-MOSFET Power dissipation: 0.3W Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN2250UFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 1.03A Drain-source voltage: 20V Gate charge: 3.1nC Case: X1-DFN1006-3 Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 0.25Ω Pulsed drain current: 6A Type of transistor: N-MOSFET Power dissipation: 0.3W |
Produkt ist nicht verfügbar |