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DMN2250UFB-7B

DMN2250UFB-7B Diodes Incorporated

DMN2250UFB.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.35A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V
auf Bestellung 430000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.10 EUR
30000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2250UFB-7B Diodes Incorporated

Description: MOSFET N-CH 20V 1.35A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V.

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DMN2250UFB-7B DMN2250UFB-7B Hersteller : Diodes Incorporated DMN2250UFB.pdf Description: MOSFET N-CH 20V 1.35A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V
auf Bestellung 433839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
39+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
5000+0.11 EUR
Mindestbestellmenge: 27
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DMN2250UFB-7B DMN2250UFB-7B Hersteller : Diodes Incorporated DMN2250UFB.pdf MOSFETs N-CH MOSFET 20V
auf Bestellung 85540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.69 EUR
10+0.48 EUR
100+0.20 EUR
1000+0.12 EUR
10000+0.08 EUR
Mindestbestellmenge: 5
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DMN2250UFB-7B Hersteller : DIODES INCORPORATED DMN2250UFB.pdf DMN2250UFB-7B SMD N channel transistors
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