Technische Details DMN2300UFB-7B Diodes Inc
Description: MOSFET N-CH 20V 1.32A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V, Power Dissipation (Max): 468mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V.
Weitere Produktangebote DMN2300UFB-7B
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN2300UFB-7B | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W Mounting: SMD Case: X1-DFN1006-3 Kind of package: reel; tape Power dissipation: 1.2W Drain-source voltage: 20V Drain current: 0.94A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.89nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A Anzahl je Verpackung: 10000 Stücke |
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DMN2300UFB-7B | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 1.32A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Power Dissipation (Max): 468mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V |
Produkt ist nicht verfügbar |
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DMN2300UFB-7B | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS |
Produkt ist nicht verfügbar |
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| DMN2300UFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W Mounting: SMD Case: X1-DFN1006-3 Kind of package: reel; tape Power dissipation: 1.2W Drain-source voltage: 20V Drain current: 0.94A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.89nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A |
Produkt ist nicht verfügbar |