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Technische Details DMN2300UFB-7B Diodes Zetex
Description: MOSFET N-CH 20V 1.32A 3DFN, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 468mW (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta), FET Type: N-Channel.
Weitere Produktangebote DMN2300UFB-7B nach Preis ab 0.14 EUR bis 0.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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DMN2300UFB-7B | Diodes Incorporated |
 Description: MOSFET N-CH 20V 1.32A 3DFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 468mW (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta) FET Type: N-Channel |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2300UFB-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.32A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 468mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 20V 1.32A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 468mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.17 EUR |
| 50000+ | 0.14 EUR |