DMN2300UFD-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.16 EUR |
| 6000+ | 0.14 EUR |
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Technische Details DMN2300UFD-7 Diodes Incorporated
Description: MOSFET N-CH 20V 1.21A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X1-DFN1212-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V.
Weitere Produktangebote DMN2300UFD-7 nach Preis ab 0.21 EUR bis 0.81 EUR
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DMN2300UFD-7 | Diodes Incorporated |
 Description: MOSFET N-CH 20V 1.21A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V |
auf Bestellung 2408 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2300UFD-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.21A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V
Description: MOSFET N-CH 20V 1.21A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |