Technische Details DMN2310UWQ-7 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 1.1A, Pulsed drain current: 4.4A, Power dissipation: 0.55W, Case: SOT323, Gate-source voltage: ±8V, On-state resistance: 0.38Ω, Mounting: SMD, Gate charge: 0.7nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 10 Stücke.
Weitere Produktangebote DMN2310UWQ-7
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DMN2310UWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.1A Pulsed drain current: 4.4A Power dissipation: 0.55W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMN2310UWQ-7 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K |
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DMN2310UWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.1A Pulsed drain current: 4.4A Power dissipation: 0.55W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |