DMN2320UFB4-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.24 EUR |
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Technische Details DMN2320UFB4-7B Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V, Power Dissipation (Max): 520mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 10 V.
Weitere Produktangebote DMN2320UFB4-7B nach Preis ab 0.22 EUR bis 0.81 EUR
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DMN2320UFB4-7B | Hersteller : Diodes Incorporated |
MOSFET 20V N-Ch Enh FET 8Vgss .52W 71pF |
auf Bestellung 20274 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2320UFB4-7B | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 1A X2-DFN1006-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 10 V |
auf Bestellung 28952 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2320UFB4-7B | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 1A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
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| DMN2320UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W Mounting: SMD Power dissipation: 1.07W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.89nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6A Case: X2-DFN1006-3 Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 1Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN2320UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W Mounting: SMD Power dissipation: 1.07W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.89nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6A Case: X2-DFN1006-3 Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |