DMN2320UFB4-7B Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.61 EUR |
| 10+ | 0.9 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.4 EUR |
| 5000+ | 0.38 EUR |
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Technische Details DMN2320UFB4-7B Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: X2-DFN1006-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 520mW (Ta), Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN2320UFB4-7B nach Preis ab 0.39 EUR bis 1.74 EUR
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DMN2320UFB4-7B | Diodes Incorporated |
 Description: MOSFET N-CH 20V 1A X2-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 10 V |
auf Bestellung 5812 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2320UFB4-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 10 V
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 10 V
auf Bestellung 5812 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 20+ | 1.09 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.44 EUR |
| 5000+ | 0.39 EUR |