DMN2400UFB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 750MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
auf Bestellung 1419000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.096 EUR |
| 9000+ | 0.079 EUR |
| 30000+ | 0.078 EUR |
| 75000+ | 0.07 EUR |
| 150000+ | 0.061 EUR |
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Technische Details DMN2400UFB-7 Diodes Incorporated
Description: MOSFET N-CH 20V 750MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V.
Weitere Produktangebote DMN2400UFB-7 nach Preis ab 0.076 EUR bis 0.55 EUR
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DMN2400UFB-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K |
auf Bestellung 47935 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2400UFB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 750MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V |
auf Bestellung 1435262 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2400UFB-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 0.75A 3-Pin DFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2400UFB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 550mA; Idm: 3A; 470mW Polarisation: unipolar Power dissipation: 0.47W Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Type of transistor: N-MOSFET On-state resistance: 0.9Ω Drain current: 0.55A Drain-source voltage: 20V Case: X1-DFN1006-3 Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMN2400UFB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 550mA; Idm: 3A; 470mW Polarisation: unipolar Power dissipation: 0.47W Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Type of transistor: N-MOSFET On-state resistance: 0.9Ω Drain current: 0.55A Drain-source voltage: 20V Case: X1-DFN1006-3 Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |