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DMN2400UFB4-7

DMN2400UFB4-7 Diodes Incorporated

DMN2400UFB4.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.07 EUR
9000+0.06 EUR
15000+0.06 EUR
Mindestbestellmenge: 3000
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Technische Details DMN2400UFB4-7 Diodes Incorporated

Description: MOSFET N-CH 20V 750MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V.

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DMN2400UFB4-7 DMN2400UFB4-7 Hersteller : Diodes Incorporated DIOD_S_A0004198929_1-2512621.pdf MOSFETs MOSFET N-CHANNEL DFN DFN1006-H43 GREEN 3K
auf Bestellung 7865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.39 EUR
11+0.26 EUR
100+0.13 EUR
1000+0.12 EUR
3000+0.09 EUR
9000+0.07 EUR
24000+0.07 EUR
Mindestbestellmenge: 8
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DMN2400UFB4-7 DMN2400UFB4-7 Hersteller : Diodes Incorporated DMN2400UFB4.pdf Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
auf Bestellung 32973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
68+0.26 EUR
140+0.13 EUR
500+0.11 EUR
Mindestbestellmenge: 42
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DMN2400UFB4-7 DMN2400UFB4-7 Hersteller : Diodes Inc 1402889155077792dmn2400ufb4.pdf Trans MOSFET N-CH 20V 0.75A 3-Pin DFN T/R
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