DMN2400UFDQ-7 Diodes Incorporated
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.89 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.29 EUR |
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Technische Details DMN2400UFDQ-7 Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN1212-3 (Type C), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 16 V.
Weitere Produktangebote DMN2400UFDQ-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN2400UFDQ-7 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 20V 0.9A Automotive 3-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMN2400UFDQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 850mW Polarisation: unipolar Power dissipation: 0.85W Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Type of transistor: N-MOSFET On-state resistance: 1.6Ω Drain current: 0.7A Drain-source voltage: 20V Case: U-DFN1212-3 Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN2400UFDQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 900MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN1212-3 (Type C) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 16 V |
Produkt ist nicht verfügbar |
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| DMN2400UFDQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 850mW Polarisation: unipolar Power dissipation: 0.85W Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Type of transistor: N-MOSFET On-state resistance: 1.6Ω Drain current: 0.7A Drain-source voltage: 20V Case: U-DFN1212-3 Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |