DMN2450UFB4-7R Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.083 EUR |
| 6000+ | 0.077 EUR |
| 9000+ | 0.064 EUR |
| 30000+ | 0.062 EUR |
| 75000+ | 0.056 EUR |
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Technische Details DMN2450UFB4-7R Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V.
Weitere Produktangebote DMN2450UFB4-7R nach Preis ab 0.088 EUR bis 0.75 EUR
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DMN2450UFB4-7R | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 1A X2-DFN1006-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V |
auf Bestellung 140052 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2450UFB4-7R | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 3K |
auf Bestellung 16374 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMN2450UFB4-7R | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 1A T/R |
Produkt ist nicht verfügbar |
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| DMN2450UFB4-7R | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Mounting: SMD Case: X2-DFN1006-3 Kind of package: reel; tape Power dissipation: 0.9W Drain-source voltage: 20V Drain current: 0.8A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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| DMN2450UFB4-7R | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Mounting: SMD Case: X2-DFN1006-3 Kind of package: reel; tape Power dissipation: 0.9W Drain-source voltage: 20V Drain current: 0.8A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A |
Produkt ist nicht verfügbar |