DMN2450UFD-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
auf Bestellung 258000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.096 EUR |
| 6000+ | 0.092 EUR |
| 9000+ | 0.079 EUR |
| 30000+ | 0.078 EUR |
| 75000+ | 0.064 EUR |
| 150000+ | 0.063 EUR |
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Technische Details DMN2450UFD-7 Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1212-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V.
Weitere Produktangebote DMN2450UFD-7 nach Preis ab 0.069 EUR bis 0.53 EUR
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DMN2450UFD-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 35518 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2450UFD-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 900MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V |
auf Bestellung 261382 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2450UFD-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 0.9A 3-Pin X1-DFN T/R |
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| DMN2450UFD-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW Case: X1-DFN1212-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 0.89W Polarisation: unipolar Gate charge: 0.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMN2450UFD-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW Case: X1-DFN1212-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 0.89W Polarisation: unipolar Gate charge: 0.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A |
Produkt ist nicht verfügbar |