DMN2451UFB4-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
| Anzahl | Preis |
|---|---|
| 10000+ | 0.074 EUR |
| 20000+ | 0.06 EUR |
| 30000+ | 0.058 EUR |
| 50000+ | 0.056 EUR |
| 70000+ | 0.054 EUR |
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Technische Details DMN2451UFB4-7B Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V.
Weitere Produktangebote DMN2451UFB4-7B nach Preis ab 0.074 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN2451UFB4-7B | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K |
auf Bestellung 8760 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2451UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 1.1W; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.3A Power dissipation: 1.1W Case: DFN1006-3 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 3.4nC |
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