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DMN2451UFDQ-7

DMN2451UFDQ-7 Diodes Incorporated

DMN2451UFDQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 2331000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.12 EUR
15000+0.11 EUR
30000+0.1 EUR
75000+0.091 EUR
150000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2451UFDQ-7 Diodes Incorporated

Description: MOSFET N-CH 20V 900MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN1212-3 (Type C), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V, Qualification: AEC-Q101.

Weitere Produktangebote DMN2451UFDQ-7 nach Preis ab 0.16 EUR bis 0.63 EUR

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DMN2451UFDQ-7 DMN2451UFDQ-7 Hersteller : Diodes Incorporated DMN2451UFDQ.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 200mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 2332847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
46+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DMN2451UFDQ-7 Hersteller : Diodes Inc DMN2451UFDQ.pdf MOSFET BVDSS: 8V24V X1-DFN1212-3 T&R 3K
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DMN2451UFDQ-7 Hersteller : Diodes Incorporated DMN2451UFDQ-3103572.pdf MOSFET MOSFET BVDSS: 8V~24V X1-DFN1212-3 T&R 3K
Produkt ist nicht verfügbar
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