DMN2500UFB4-7 Diodes Incorporated
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Technische Details DMN2500UFB4-7 Diodes Incorporated
Description: MOSFET N-CH 20V 810MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 810mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 460mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V.
Weitere Produktangebote DMN2500UFB4-7
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DMN2500UFB4-7 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 20V 1A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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DMN2500UFB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 810MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 810mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V |
Produkt ist nicht verfügbar |
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DMN2500UFB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 810MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 810mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V |
Produkt ist nicht verfügbar |