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DMN2550UFA-7B

DMN2550UFA-7B Diodes Incorporated

DMN2550UFA.pdf Hersteller: Diodes Incorporated
MOSFETs 20V N-Ch Enh FET 8 VGS 52.5pF 0.88nC
auf Bestellung 17242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.51 EUR
10+0.31 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.11 EUR
5000+0.099 EUR
10000+0.092 EUR
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Technische Details DMN2550UFA-7B Diodes Incorporated

Description: MOSFET N-CH 20V 600MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 52.5 pF @ 16 V.

Weitere Produktangebote DMN2550UFA-7B nach Preis ab 0.099 EUR bis 0.51 EUR

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DMN2550UFA-7B DMN2550UFA-7B Hersteller : Diodes Incorporated DMN2550UFA.pdf Description: MOSFET N-CH 20V 600MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52.5 pF @ 16 V
auf Bestellung 8179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.099 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
DMN2550UFA-7B DMN2550UFA-7B Hersteller : Diodes Incorporated DMN2550UFA.pdf Description: MOSFET N-CH 20V 600MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52.5 pF @ 16 V
Produkt ist nicht verfügbar
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DMN2550UFA-7B Hersteller : DIODES INCORPORATED DMN2550UFA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1.5A; 360mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.36W
Case: X2-DFN0806-3
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate charge: 880pC
Drain current: 0.5A
On-state resistance: 1Ω
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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