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DMN2550UFA-7B

DMN2550UFA-7B Diodes Incorporated

DMN2550UFA.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 600MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52.5 pF @ 16 V
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.08 EUR
20000+0.08 EUR
30000+0.07 EUR
50000+0.07 EUR
Mindestbestellmenge: 10000
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Technische Details DMN2550UFA-7B Diodes Incorporated

Description: MOSFET N-CH 20V 600MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 52.5 pF @ 16 V.

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DMN2550UFA-7B DMN2550UFA-7B Hersteller : Diodes Incorporated DMN2550UFA.pdf Description: MOSFET N-CH 20V 600MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52.5 pF @ 16 V
auf Bestellung 279435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
71+0.25 EUR
106+0.17 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.10 EUR
5000+0.09 EUR
Mindestbestellmenge: 48
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DMN2550UFA-7B DMN2550UFA-7B Hersteller : Diodes Incorporated DMN2550UFA.pdf MOSFETs 20V N-Ch Enh FET 8 VGS 52.5pF 0.88nC
auf Bestellung 20858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.61 EUR
10+0.42 EUR
100+0.17 EUR
1000+0.11 EUR
2500+0.10 EUR
10000+0.08 EUR
20000+0.07 EUR
Mindestbestellmenge: 5
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DMN2550UFA-7B DMN2550UFA-7B Hersteller : Diodes Inc dmn2550ufa.pdf Trans MOSFET N-CH 20V 0.6A 3-Pin X2-DFN T/R
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DMN2550UFA-7B Hersteller : DIODES INCORPORATED DMN2550UFA.pdf DMN2550UFA-7B SMD N channel transistors
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