DMN2600UFB-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.086 EUR |
| 6000+ | 0.078 EUR |
| 9000+ | 0.073 EUR |
| 15000+ | 0.068 EUR |
| 21000+ | 0.065 EUR |
| 30000+ | 0.062 EUR |
| 75000+ | 0.056 EUR |
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Technische Details DMN2600UFB-7 Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 540mW (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote DMN2600UFB-7 nach Preis ab 0.06 EUR bis 0.42 EUR
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DMN2600UFB-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V X1-DFN1006-3 T&R 3K |
auf Bestellung 20203 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2600UFB-7 | Diodes Incorporated |
Description: MOSFET N-CH 25V 1.3A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V |
auf Bestellung 106281 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2600UFB-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V X1-DFN1006-3 T&R 3K
MOSFETs MOSFET BVDSS: 25V-30V X1-DFN1006-3 T&R 3K
auf Bestellung 20203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 0.26 EUR |
| 40+ | 0.07 EUR |
| 100+ | 0.069 EUR |
| 3000+ | 0.067 EUR |
| 24000+ | 0.06 EUR |
| DMN2600UFB-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Description: MOSFET N-CH 25V 1.3A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
auf Bestellung 106281 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 68+ | 0.26 EUR |
| 108+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |