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DMN2710UDW-13 Diodes Inc


DMN2710UDW.pdf Hersteller: Diodes Inc
MOSFET BVDSS: 8V24V SOT363 T&R 10K
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Technische Details DMN2710UDW-13 Diodes Inc

Description: MOSFET 2N-CH 20V 0.8A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 360mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363.

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DMN2710UDW-13 DMN2710UDW-13 Hersteller : Diodes Incorporated DMN2710UDW.pdf Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
DMN2710UDW-13 Hersteller : Diodes Incorporated DIOD_S_A0012994365_1-2513138.pdf MOSFET MOSFET BVDSS: 8V-24V SOT363 T&R 10K
Produkt ist nicht verfügbar