DMN2710UT-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.094 EUR |
| 15000+ | 0.088 EUR |
| 21000+ | 0.085 EUR |
| 30000+ | 0.081 EUR |
| 75000+ | 0.073 EUR |
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Technische Details DMN2710UT-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 870mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V.
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Verfügbarkeit |
Preis |
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| DMN2710UT-7 | Hersteller : Diodes Inc |
MOSFET BVDSS: 8V24V SOT523 T&R 3K |
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| DMN2710UT-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V 24V SOT523 T&R 3K |
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DMN2710UT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523 Mounting: SMD Type of transistor: N-MOSFET Case: SOT523 Polarisation: unipolar Gate charge: 0.6nC Kind of channel: enhancement Power dissipation: 0.52W On-state resistance: 0.75Ω Drain current: 0.7A Pulsed drain current: 5.6A Gate-source voltage: ±6V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |