Technische Details DMN2710UT-7 Diodes Inc
Description: MOSFET BVDSS: 8V~24V SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 870mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V.
Weitere Produktangebote DMN2710UT-7
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DMN2710UT-7 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523 Mounting: SMD Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 0.6nC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: 5.6A Case: SOT523 Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 0.52W Anzahl je Verpackung: 10 Stücke |
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DMN2710UT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V |
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| DMN2710UT-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V SOT523 T&R 3K |
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DMN2710UT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523 Mounting: SMD Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 0.6nC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: 5.6A Case: SOT523 Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 0.52W |
Produkt ist nicht verfügbar |