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DMN2710UTQ-7

DMN2710UTQ-7 Diodes Incorporated

DMN2710UTQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 243000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
9000+ 0.1 EUR
30000+ 0.098 EUR
75000+ 0.081 EUR
150000+ 0.08 EUR
Mindestbestellmenge: 3000
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Technische Details DMN2710UTQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 870mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN2710UTQ-7 nach Preis ab 0.092 EUR bis 0.7 EUR

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Preis ohne MwSt
DMN2710UTQ-7 DMN2710UTQ-7 Hersteller : Diodes Incorporated DMN2710UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 244532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DMN2710UTQ-7 Hersteller : Diodes Incorporated DMN2710UTQ.pdf MOSFET MOSFET BVDSS: 8V~24V SOT523 T&R 3K
auf Bestellung 44750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.7 EUR
10+ 0.51 EUR
100+ 0.29 EUR
1000+ 0.18 EUR
3000+ 0.15 EUR
45000+ 0.097 EUR
99000+ 0.092 EUR
Mindestbestellmenge: 4
DMN2710UTQ-7 Hersteller : Diodes Inc dmn2710utq.pdf N-Channel Enhancement Mode MOSFET
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