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DMN2710UV-7

DMN2710UV-7 Diodes Incorporated

DMN2710UV.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.92A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.073 EUR
6000+0.066 EUR
9000+0.062 EUR
15000+0.057 EUR
21000+0.055 EUR
30000+0.052 EUR
75000+0.047 EUR
Mindestbestellmenge: 3000
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Technische Details DMN2710UV-7 Diodes Incorporated

Description: MOSFET 2N-CH 20V 0.92A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 920mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.

Weitere Produktangebote DMN2710UV-7 nach Preis ab 0.055 EUR bis 0.37 EUR

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DMN2710UV-7 DMN2710UV-7 Hersteller : Diodes Incorporated DMN2710UV.pdf MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 3K
auf Bestellung 11704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.36 EUR
13+0.23 EUR
100+0.11 EUR
500+0.1 EUR
1000+0.092 EUR
3000+0.058 EUR
6000+0.055 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UV-7 DMN2710UV-7 Hersteller : Diodes Incorporated DMN2710UV.pdf Description: MOSFET 2N-CH 20V 0.92A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 93013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
78+0.23 EUR
126+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UV-7 Hersteller : Diodes Inc dmn2710uv.pdf Dual N-Channel Enhancement Mode MOSFET
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