DMN2990UFZ-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 250MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
auf Bestellung 1640000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.16 EUR |
| 30000+ | 0.15 EUR |
| 50000+ | 0.14 EUR |
| 100000+ | 0.13 EUR |
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Technische Details DMN2990UFZ-7B Diodes Incorporated
Description: MOSFET N-CH 20V 250MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V.
Weitere Produktangebote DMN2990UFZ-7B nach Preis ab 0.13 EUR bis 0.84 EUR
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DMN2990UFZ-7B | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 250MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 170mA; Idm: 0.8A; 320mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.17A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.8A Mounting: SMD Case: X2-DFN0606-3 Anzahl je Verpackung: 10000 Stücke |
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| DMN2990UFZ-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 170mA; Idm: 0.8A; 320mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.17A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.8A Mounting: SMD Case: X2-DFN0606-3 |
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