DMN2990UFZ-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 250MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
| Anzahl | Preis |
|---|---|
| 10000+ | 0.16 EUR |
| 30000+ | 0.15 EUR |
| 50000+ | 0.14 EUR |
| 100000+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2990UFZ-7B Diodes Incorporated
Description: MOSFET N-CH 20V 250MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V.
Weitere Produktangebote DMN2990UFZ-7B nach Preis ab 0.12 EUR bis 0.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN2990UFZ-7B | Diodes Incorporated |
MOSFETs 20V N-Ch Enh FET Dual .25A .32W 389pF |
auf Bestellung 29167 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMN2990UFZ-7B | Diodes Incorporated |
Description: MOSFET N-CH 20V 250MA 3DFNInput Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: X2-DFN0606-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
auf Bestellung 1650325 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2990UFZ-7B |
![]() |
Hersteller: Diodes Incorporated
MOSFETs 20V N-Ch Enh FET Dual .25A .32W 389pF
MOSFETs 20V N-Ch Enh FET Dual .25A .32W 389pF
auf Bestellung 29167 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 0.32 EUR |
| 13+ | 0.22 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.12 EUR |
| DMN2990UFZ-7B |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 250MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: X2-DFN0606-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 250MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: X2-DFN0606-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 1650325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.19 EUR |
| 5000+ | 0.18 EUR |

