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DMN2991UDJ-7 Diodes Incorporated


DMN2991UDJ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.52A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
auf Bestellung 220000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.093 EUR
30000+0.09 EUR
50000+0.081 EUR
100000+0.073 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2991UDJ-7 Diodes Incorporated

Description: MOSFET 2N-CH 20V 0.52A SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 400mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-963.

Weitere Produktangebote DMN2991UDJ-7 nach Preis ab 0.071 EUR bis 0.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DMN2991UDJ-7 DMN2991UDJ-7 Diodes Incorporated DMN2991UDJ.pdf MOSFETs MOSFET BVDSS: 8V~24V SOT963 T&R 10K
auf Bestellung 18447 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.11 EUR
5000+0.099 EUR
10000+0.071 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UDJ-7 DMN2991UDJ-7 Diodes Incorporated DMN2991UDJ.pdf Description: MOSFET 2N-CH 20V 0.52A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
auf Bestellung 235566 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
43+0.49 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.14 EUR
2000+0.12 EUR
5000+0.11 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UDJ-7 DMN2991UDJ.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V SOT963 T&R 10K
auf Bestellung 18447 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.11 EUR
5000+0.099 EUR
10000+0.071 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UDJ-7 DMN2991UDJ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.52A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
auf Bestellung 235566 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
43+0.49 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.14 EUR
2000+0.12 EUR
5000+0.11 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH