DMN2991UDJ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 0.52A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
auf Bestellung 220000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.078 EUR |
| 30000+ | 0.076 EUR |
| 50000+ | 0.068 EUR |
| 100000+ | 0.061 EUR |
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Technische Details DMN2991UDJ-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.52A SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 400mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-963.
Weitere Produktangebote DMN2991UDJ-7 nach Preis ab 0.072 EUR bis 0.61 EUR
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DMN2991UDJ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.52A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 |
auf Bestellung 235566 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDJ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V SOT963 T&R 10K |
auf Bestellung 9975 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDJ-7 | Hersteller : Diodes Inc |
Dual N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMN2991UDJ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 308mA; Idm: 1.4A; 400mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 308mA On-state resistance: 2.4Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.4W Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.4A Mounting: SMD Case: SOT963 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN2991UDJ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 308mA; Idm: 1.4A; 400mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 308mA On-state resistance: 2.4Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.4W Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.4A Mounting: SMD Case: SOT963 |
Produkt ist nicht verfügbar |