DMN2991UDR4-7 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.5 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.12 EUR |
| 5000+ | 0.1 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
7 Stücke
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Technische Details DMN2991UDR4-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.5A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 380mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1010-6 (Type UXC).
Weitere Produktangebote DMN2991UDR4-7 nach Preis ab 0.19 EUR bis 0.5 EUR
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DMN2991UDR4-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 0.5A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-6 (Type UXC) |
auf Bestellung 3090 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDR4-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
Description: MOSFET 2N-CH 20V 0.5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
auf Bestellung 3090 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 0.5 EUR |
| 70+ | 0.3 EUR |
| 85+ | 0.25 EUR |
| 98+ | 0.21 EUR |
| 112+ | 0.19 EUR |