DMN2991UFZ-7B Diodes Incorporated
auf Bestellung 5965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.12 EUR |
| 5000+ | 0.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2991UFZ-7B Diodes Incorporated
Description: MOSFET N-CH 20V 550MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 530mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V.
Weitere Produktangebote DMN2991UFZ-7B nach Preis ab 0.1 EUR bis 0.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN2991UFZ-7B | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 20V 550MA 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V |
auf Bestellung 5845 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| DMN2991UFZ-7B | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 0.55A 3-Pin X2DFN |
Produkt ist nicht verfügbar |
||||||||||||||||||
| DMN2991UFZ-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 440mA; Idm: 1.5A; 530mW On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.53W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 0.35nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 1.5A Mounting: SMD Case: X2-DFN0606-3 Drain-source voltage: 20V Drain current: 0.44A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
DMN2991UFZ-7B | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 550MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
| DMN2991UFZ-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 440mA; Idm: 1.5A; 530mW On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.53W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 0.35nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 1.5A Mounting: SMD Case: X2-DFN0606-3 Drain-source voltage: 20V Drain current: 0.44A |
Produkt ist nicht verfügbar |