Produkte > DIODES INCORPORATED > DMN2991UFZ-7B
DMN2991UFZ-7B

DMN2991UFZ-7B Diodes Incorporated

DIOD_S_A0008534022_1-2543234.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V X2-DFN0606-3 T&R 10K
auf Bestellung 7485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.45 EUR
10+0.29 EUR
100+0.14 EUR
1000+0.11 EUR
2500+0.10 EUR
10000+0.09 EUR
20000+0.08 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN2991UFZ-7B Diodes Incorporated

Description: MOSFET N-CH 20V 550MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 530mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V.

Weitere Produktangebote DMN2991UFZ-7B nach Preis ab 0.10 EUR bis 0.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN2991UFZ-7B DMN2991UFZ-7B Hersteller : Diodes Incorporated DMN2991UFZ.pdf Description: MOSFET N-CH 20V 550MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V
auf Bestellung 5845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
53+0.34 EUR
109+0.16 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.10 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UFZ-7B Hersteller : Diodes Inc dmn2991ufz.pdf Trans MOSFET N-CH 20V 0.55A 3-Pin X2DFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UFZ-7B Hersteller : DIODES INCORPORATED DMN2991UFZ.pdf DMN2991UFZ-7B SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UFZ-7B DMN2991UFZ-7B Hersteller : Diodes Incorporated DMN2991UFZ.pdf Description: MOSFET N-CH 20V 550MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH