DMN2991UFZ-7B Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.11 EUR |
| 5000+ | 0.095 EUR |
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Technische Details DMN2991UFZ-7B Diodes Incorporated
Description: MOSFET N-CH 20V 550MA 3DFN, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 530mW (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: X2-DFN0606-3.
Weitere Produktangebote DMN2991UFZ-7B nach Preis ab 0.1 EUR bis 0.56 EUR
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DMN2991UFZ-7B | Diodes Incorporated |
 Description: MOSFET N-CH 20V 550MA 3DFNInput Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: X2-DFN0606-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 530mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
auf Bestellung 5845 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UFZ-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 550MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: X2-DFN0606-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 550MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: X2-DFN0606-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 5845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 53+ | 0.34 EUR |
| 109+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| 5000+ | 0.1 EUR |