DMN3008SFG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 17.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3008SFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 17.6A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V.
Weitere Produktangebote DMN3008SFG-7 nach Preis ab 0.49 EUR bis 2.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN3008SFG-7 | Diodes Incorporated |
MOSFETs 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A |
auf Bestellung 3875 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DMN3008SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 17.6A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V |
auf Bestellung 4290 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN3008SFG-7 |
|
Hersteller: Diodes Incorporated
MOSFETs 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
MOSFETs 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A
auf Bestellung 3875 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.4 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| 2000+ | 0.49 EUR |
| DMN3008SFG-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 17.6A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V
Description: MOSFET N-CH 30V 17.6A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V
auf Bestellung 4290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 17+ | 1.29 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.58 EUR |