DMN3008SFG-7 Diodes Incorporated
auf Bestellung 2614 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.1 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.47 EUR |
| 2000+ | 0.42 EUR |
| 4000+ | 0.41 EUR |
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Technische Details DMN3008SFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 17.6A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V.
Weitere Produktangebote DMN3008SFG-7 nach Preis ab 0.49 EUR bis 1.14 EUR
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DMN3008SFG-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 17.6A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V |
auf Bestellung 1409 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3008SFG-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 17.6A 8-Pin PowerDI EP T/R |
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| DMN3008SFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Drain-source voltage: 30V Drain current: 18.4A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 86nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 1 Stücke |
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DMN3008SFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 17.6A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V |
Produkt ist nicht verfügbar |
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| DMN3008SFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Drain-source voltage: 30V Drain current: 18.4A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 86nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |