Technische Details DMN3009LFVWQ-7 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 48A, Pulsed drain current: 90A, Power dissipation: 2W, Case: PowerDI3333-8, Gate-source voltage: ±20V, On-state resistance: 7.4mΩ, Mounting: SMD, Gate charge: 42nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 2000 Stücke.
Weitere Produktangebote DMN3009LFVWQ-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN3009LFVWQ-7 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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Type-UX;-;-8-Top.jpg "DMN3009LFVWQ-7") |
DMN3009LFVWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V POWERDI333 |
Produkt ist nicht verfügbar |
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| DMN3009LFVWQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K |
Produkt ist nicht verfügbar |
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| DMN3009LFVWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |