DMN3010LK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 13.1A/43A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 1 EUR |
| 21+ | 0.88 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.43 EUR |
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Technische Details DMN3010LK3-13 Diodes Incorporated
Description: MOSFET N-CH 30V 13.1A/43A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 18A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V.
Weitere Produktangebote DMN3010LK3-13 nach Preis ab 0.39 EUR bis 1.02 EUR
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DMN3010LK3-13 | Hersteller : Diodes Incorporated |
MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF |
auf Bestellung 4958 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3010LK3-13 Produktcode: 191700 |
Transistoren > MOSFET N-CH |
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DMN3010LK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 13.1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| DMN3010LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10.5A Pulsed drain current: 90A Power dissipation: 2.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DMN3010LK3-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 13.1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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DMN3010LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 13.1A/43A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 18A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V |
Produkt ist nicht verfügbar |
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| DMN3010LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10.5A; Idm: 90A; 2.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10.5A Pulsed drain current: 90A Power dissipation: 2.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |