Weitere Produktangebote DMN3010LK3-13 nach Preis ab 0.4 EUR bis 1.74 EUR
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DMN3010LK3-13 | Diodes Incorporated |
 MOSFETs 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF |
auf Bestellung 4748 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3010LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 13.1A/43A TO252 Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3010LK3-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF
MOSFETs 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF
auf Bestellung 4748 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.36 EUR |
| 10+ | 0.94 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.46 EUR |
| 2500+ | 0.4 EUR |
| DMN3010LK3-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 13.1A/43A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 13.1A/43A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 16+ | 1.1 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.56 EUR |