DMN3012LEG-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 10A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.97 EUR |
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Technische Details DMN3012LEG-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V, Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V, Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type D).
Weitere Produktangebote DMN3012LEG-13 nach Preis ab 0.85 EUR bis 3.48 EUR
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DMN3012LEG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA Supplier Device Package: PowerDI3333-8 (Type D) |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3012LEG-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 10A 8-Pin PowerDI EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3012LEG-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 10A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMN3012LEG-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
Produkt ist nicht verfügbar |