DMN3015LSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 8.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.59 EUR |
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Technische Details DMN3015LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V, Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN3015LSD-13 nach Preis ab 0.51 EUR bis 1.66 EUR
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DMN3015LSD-13 | Hersteller : Diodes Incorporated |
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DMN3015LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 8.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8 Kind of package: reel; tape Drain current: 9A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 18mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 1W Gate charge: 25.1nC Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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DMN3015LSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8 Kind of package: reel; tape Drain current: 9A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 18mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 1W Gate charge: 25.1nC Polarisation: unipolar |
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