DMN3015LSD-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 3+ | 1.11 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
| 2500+ | 0.32 EUR |
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Technische Details DMN3015LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.4A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN3015LSD-13 nach Preis ab 0.4 EUR bis 1.43 EUR
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DMN3015LSD-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 8.4A 8SODrain to Source Voltage (Vdss): 30V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) |
auf Bestellung 1602 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3015LSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.4A 8SO
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Description: MOSFET 2N-CH 30V 8.4A 8SO
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
auf Bestellung 1602 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 20+ | 0.89 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |