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DMN3016LDN-7

DMN3016LDN-7 Diodes Incorporated

DMN3016LDN.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type J)
Part Status: Active
auf Bestellung 162000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.28 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3016LDN-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 7.3A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.3A, Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type J), Part Status: Active.

Weitere Produktangebote DMN3016LDN-7 nach Preis ab 0.27 EUR bis 0.90 EUR

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DMN3016LDN-7 DMN3016LDN-7 Hersteller : Diodes Incorporated DMN3016LDN.pdf Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type J)
Part Status: Active
auf Bestellung 163878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.76 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.33 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DMN3016LDN-7 DMN3016LDN-7 Hersteller : Diodes Incorporated DMN3016LDN.pdf MOSFET N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF
auf Bestellung 3146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.90 EUR
10+0.78 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.34 EUR
3000+0.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMN3016LDN-7 Hersteller : DIODES INCORPORATED DMN3016LDN.pdf DMN3016LDN-7 SMD N channel transistors
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