DMN3016LDN-7 Diodes Incorporated
auf Bestellung 3191 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.29 EUR |
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Technische Details DMN3016LDN-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.3A, Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type J), Part Status: Active.
Weitere Produktangebote DMN3016LDN-7 nach Preis ab 0.38 EUR bis 0.99 EUR
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DMN3016LDN-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 7.3A 8VDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: V-DFN3030-8 (Type J) Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3016LDN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.3A Pulsed drain current: 45A Power dissipation: 1.6W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN3016LDN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 7.3A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: V-DFN3030-8 (Type J) Part Status: Active |
Produkt ist nicht verfügbar |
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| DMN3016LDN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.3A Pulsed drain current: 45A Power dissipation: 1.6W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |