DMN3016LDN-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
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Technische Details DMN3016LDN-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN, Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7.3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Part Status: Active, Supplier Device Package: V-DFN3030-8 (Type J), Vgs(th) (Max) @ Id: 2V @ 250µA, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V.
Weitere Produktangebote DMN3016LDN-7 nach Preis ab 0.27 EUR bis 0.9 EUR
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DMN3016LDN-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 7.3A 8VDFN Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.3A Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: V-DFN3030-8 (Type J) Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V |
auf Bestellung 163878 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3016LDN-7 | Diodes Incorporated |
MOSFET N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF |
auf Bestellung 3146 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN3016LDN-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
auf Bestellung 163878 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.33 EUR |
| DMN3016LDN-7 |
|
Hersteller: Diodes Incorporated
MOSFET N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF
MOSFET N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF
auf Bestellung 3146 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.27 EUR |