DMN3016LFDF-7 Diodes Incorporated
auf Bestellung 37798 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 0.56 EUR |
| 10+ | 0.5 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.22 EUR |
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Technische Details DMN3016LFDF-7 Diodes Incorporated
Description: MOSFET N-CH 30V 12A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V, Power Dissipation (Max): 2.02W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V.
Weitere Produktangebote DMN3016LFDF-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN3016LFDF-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 12A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 2.02W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
auf Bestellung 160550 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3016LFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 12A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 2.02W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
auf Bestellung 159000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3016LFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 50A Power dissipation: 0.47W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN3016LFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 50A; 0.47W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 50A Power dissipation: 0.47W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |