Produkte > DIODES INCORPORATED > DMN3016LK3-13
DMN3016LK3-13

DMN3016LK3-13 Diodes Incorporated

DMN3016LK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.33 EUR
5000+0.30 EUR
7500+0.29 EUR
12500+0.27 EUR
17500+0.26 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN3016LK3-13 Diodes Incorporated

Description: MOSFET N-CH 30V 12.4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V.

Weitere Produktangebote DMN3016LK3-13 nach Preis ab 0.29 EUR bis 1.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN3016LK3-13 DMN3016LK3-13 Hersteller : Diodes Incorporated DMN3016LK3.pdf MOSFETs 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC
auf Bestellung 3698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.88 EUR
10+0.76 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.33 EUR
2500+0.29 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMN3016LK3-13 DMN3016LK3-13 Hersteller : Diodes Incorporated DMN3016LK3.pdf Description: MOSFET N-CH 30V 12.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 26163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DMN3016LK3-13 Hersteller : DIODES INCORPORATED DMN3016LK3.pdf DMN3016LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH