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DMN3016LSS-13

DMN3016LSS-13 Diodes Incorporated

DMN3016LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.30 EUR
5000+0.26 EUR
7500+0.25 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3016LSS-13 Diodes Incorporated

Description: MOSFET N-CH 30V 10.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V.

Weitere Produktangebote DMN3016LSS-13 nach Preis ab 0.25 EUR bis 1.20 EUR

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DMN3016LSS-13 DMN3016LSS-13 Hersteller : Diodes Incorporated DMN3016LSS.pdf MOSFETs 30V N-Ch Enh FET 20Vdss 1.5W
auf Bestellung 5981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.70 EUR
10+0.55 EUR
100+0.41 EUR
500+0.34 EUR
1000+0.28 EUR
2500+0.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMN3016LSS-13 DMN3016LSS-13 Hersteller : Diodes Incorporated DMN3016LSS.pdf Description: MOSFET N-CH 30V 10.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 9178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.20 EUR
23+0.79 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DMN3016LSS-13 Hersteller : DIODES INCORPORATED DMN3016LSS.pdf DMN3016LSS-13 SMD N channel transistors
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