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DMN3018SFG-7

DMN3018SFG-7 Diodes Incorporated

DMN3018SFG.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.26 EUR
6000+0.25 EUR
10000+0.23 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3018SFG-7 Diodes Incorporated

Description: MOSFET N-CH 30V 8.5A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V.

Weitere Produktangebote DMN3018SFG-7 nach Preis ab 0.2 EUR bis 0.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DMN3018SFG-7 DMN3018SFG-7 Diodes Incorporated DMN3018SFG.pdf Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 16005 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3018SFG-7 DMN3018SFG-7 Diodes Incorporated DMN3018SFG.pdf Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
29+0.74 EUR
100+0.44 EUR
500+0.4 EUR
1000+0.27 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3018SFG-7 DMN3018SFG-7 Diodes Incorporated DMN3018SFG.pdf MOSFETs 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
auf Bestellung 6469 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.99 EUR
10+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
2000+0.24 EUR
4000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3018SFG-7 DMN3018SFG.pdf
DMN3018SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 16005 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3018SFG-7 DMN3018SFG.pdf
DMN3018SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
29+0.74 EUR
100+0.44 EUR
500+0.4 EUR
1000+0.27 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3018SFG-7 DMN3018SFG.pdf
DMN3018SFG-7
Hersteller: Diodes Incorporated
MOSFETs 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
auf Bestellung 6469 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.99 EUR
10+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
2000+0.24 EUR
4000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH