DMN3018SSD-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1015 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 192+ | 0.37 EUR |
| 264+ | 0.27 EUR |
| 280+ | 0.26 EUR |
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Technische Details DMN3018SSD-13 DIODES INCORPORATED
Description: MOSFET 2N-CH 30V 6.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.7A, Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN3018SSD-13 nach Preis ab 0.26 EUR bis 1.33 EUR
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DMN3018SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8 Mounting: SMD Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 |
auf Bestellung 1015 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3018SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 165000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3018SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 166921 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3018SSD-13 | Hersteller : Diodes Incorporated |
MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A |
auf Bestellung 24350 Stücke: Lieferzeit 14-28 Tag (e) |
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