DMN3018SSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2500+ | 0.3 EUR |
| 5000+ | 0.27 EUR |
| 7500+ | 0.26 EUR |
| 12500+ | 0.25 EUR |
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Technische Details DMN3018SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.7A, Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN3018SSD-13 nach Preis ab 0.27 EUR bis 1.46 EUR
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DMN3018SSD-13 | Diodes Incorporated |
MOSFETs 30V Dual N-Ch Enh 22mOhm 10V 6.7A |
auf Bestellung 9182 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3018SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 12962 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3018SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD Version: ESD Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Diodes Incorporated
MOSFETs 30V Dual N-Ch Enh 22mOhm 10V 6.7A
MOSFETs 30V Dual N-Ch Enh 22mOhm 10V 6.7A
auf Bestellung 9182 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 2500+ | 0.27 EUR |
| DMN3018SSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 6.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 12962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| DMN3018SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 49+ | 1.46 EUR |