DMN3024LSD-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 67+ | 1.27 EUR |
| 108+ | 0.8 EUR |
| 170+ | 0.5 EUR |
| 500+ | 0.4 EUR |
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Technische Details DMN3024LSD-13 DIODES INCORPORATED
Description: MOSFET 2N-CH 30V 6.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.8A, Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMN3024LSD-13 nach Preis ab 0.35 EUR bis 2.15 EUR
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DMN3024LSD-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET 30V DUAL N-CHANNEL |
auf Bestellung 44461 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3024LSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN3024LSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET 30V DUAL N-CHANNEL
MOSFETs ENHANCE MODE MOSFET 30V DUAL N-CHANNEL
auf Bestellung 44461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.36 EUR |
| 2500+ | 0.35 EUR |
| DMN3024LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 30V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.15 EUR |
| 16+ | 1.36 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |