DMN3024LSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 480000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.36 EUR |
| 5000+ | 0.34 EUR |
| 12500+ | 0.32 EUR |
| 25000+ | 0.31 EUR |
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Technische Details DMN3024LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.8A, Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMN3024LSD-13 nach Preis ab 0.29 EUR bis 1.07 EUR
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DMN3024LSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Kind of package: reel; tape Drain current: 5.8A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: SO8 On-state resistance: 36mΩ Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2293 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3024LSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Kind of package: reel; tape Drain current: 5.8A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: SO8 On-state resistance: 36mΩ Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar |
auf Bestellung 2293 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3024LSD-13 | Hersteller : Diodes Incorporated |
MOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNEL |
auf Bestellung 77108 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3024LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 480517 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3024LSD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 6.8A 8-Pin SO T/R |
auf Bestellung 52500 Stücke: Lieferzeit 14-21 Tag (e) |